Review,
A Review of High Frequency Power Converters and Related Technologies
Contributors
Wang, Yijie
0000-0002-0210-2436
(Corresponding author)
[1]
Lucia, Oscar
0000-0001-8399-4650
[2]
Zhang, Zhe
0000-0001-8407-3167
[3]
Gao, Shanshan
0000-0002-6156-8375
[1]
Xu, Dianguo
0000-0002-1594-8625
[1]
Affiliations
- [1] Harbin Inst Technol, Harbin 150001, Peoples R China [NORA names: China; Asia, East];
- [2] Univ Zaragoza, Dept Elect Engn & Commun, Zaragoza 50018, Spain [NORA names: Spain; Europe, EU; OECD];
- [3] Tech Univ Denmark, Power Elect, DK-2800 Lyngby, Denmark [NORA names: DTU Technical University of Denmark; University; Denmark; Europe, EU; Nordic; OECD]
Abstract
Development of power electronic converters tend to achieve high efficiency and at the same time high power density in many industrial applications. In recent years, with emerging third-generation semiconductor materials i.e. Silicon Carbide (SiC) and Gallium Nitride (GaN), the switching frequency of several MHz has become a widely studied frequency band, therefore traditional technology can no longer meet the demand, and many new challenges appear. This paper presents a comprehensive review of high frequency (HF) converters, the essential challenges are analyzed such as topology selection, soft-switching technologies, resonant gate drivers, magnetic components design and optimization.
Keywords
High frequency,
converter,
magnetic components,
soft-switching resonant gate driver
