Electromechanical field effects in InAs/GaAs quantum dots based on continuum (k)over-right-arrow . (p)over-right-arrow and atomistic tight-binding methods

A comparison between (k) over right arrow . (p) over right arrow and tight-binding methods for the analysis of InAs/GaAs quantum dot bandstructures is presented based on a fully coupled computation of electromechanical effects. Electromechanical effects are addressed using a continuum elastic model for the (k) over right arrow . (p) over right arrow method and a pre-conditioned Valence Force Field algorithm for the tight-binding atomistic calculations. The Valence Force Field method allows the direct identification of the impact of internal strain. Results to ensure model parameter consistency between the two methods are also given by comparing bulk and unstrained quantum-well dispersion relations.