Article, 2023

Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs

SOLID-STATE ELECTRONICS, ISSN 0038-1101, Volume 200, 10.1016/j.sse.2022.108533

Contributors

Silvestri, L. (Corresponding author) [1] Palsgaard, Mattias [2] Rhyner, Reto [1] Frey, Martin [1] Wellendorff, Jess 0000-0001-5799-1683 [2] Smidstrup, S. 0000-0002-1766-9662 [2] Gull, Ronald [1] Elsayed, Karim [3]

Affiliations

  1. [1] Synopsys Switzerland LLC, Zurich, Switzerland
    2. [NORA names: Switzerland; Europe, Non-EU; OECD];
  2. [2] Synopsys Denmark ApS, Copenhagen, Denmark
    3. [NORA names: Other Companies; Private Research; Denmark; Europe, EU; Nordic; OECD];
  3. [3] Synopsys Inc, Mountain View, CA USA
    4. [NORA names: United States; America, North; OECD]

Abstract

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Keywords

2D-FET, Ab initio, Band structure, DFT, Effective mass, MoS2, NEGF, Short-channel, TCAD, WS2

Data Provider: Clarivate

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