Article,
Ionic transport in Samarium doped Ceria free-standing single crystal membrane
Contributors
Sanna, Simone
0000-0002-9206-9421
(Corresponding author)
[1]
[2]
[3]
Ma, Zhongtao
0000-0002-3691-4790
[4]
De Angelis, Salvatore
0000-0002-2777-2129
[4]
Felici, R.
0000-0001-9897-5866
[1]
[2]
Balestrino, Giuseppe
0000-0002-6687-6748
[1]
[2]
[3]
Simonsen, Soren B
0000-0001-7172-1225
[4]
Affiliations
- [1] CNR SPIN, Via Fosso Cavaliere 100, I-00133 Rome, Italy [NORA names: Italy; Europe, EU; OECD];
- [2] CNR SPIN, Via Fosso Cavaliere 100, I-00133 Rome, Italy [NORA names: Italy; Europe, EU; OECD];
- [3] Univ Roma Tor Vergata, Dept Civil Engn & Comp Sci, CNR SPIN, I-00133 Rome, Italy [NORA names: Italy; Europe, EU; OECD];
- [4] Tech Univ Denmark, Dept Energy Convers & Storage, Fysikvej Bldg 310, DK-2800 Lyngby, Denmark [NORA names: DTU Technical University of Denmark; University; Denmark; Europe, EU; Nordic; OECD];
- [5] Orme Merisiers, Synchrotron SOLEIL, F-91190 St Aubin, France [NORA names: France; Europe, EU; OECD]
Abstract
We present the realization of Samarium Doped Ceria (SDC) free-standing membranes and their structural and ionic transport properties. An epitaxial layer of water-soluble Sr3Al2O6 (SAO) sacrificial layer was deposited onto SrTiO3 (100) oriented single crystal substrate, followed by the deposition of the SDC layer. The free -standing SDC membrane was produced by etching the SAO layer in water. The creation of a 2D free-standing membrane allowed us to determine its transport and structural properties without any possible contribution of the substrate. Moreover, the availability of a thin SDC single crystal free-standing membrane offers the op-portunity to tune the electrical properties by applying, for instance, compressive or tensile strain much larger than any substrates can induce by the lattice mismatch. Furthermore, this procedure allows the transfer of the film onto any kind of substrate and complex integrated circuit, i.e. those based on silicon technologies, giving the possibility to realize a new class of complex devices based on oxide ultra-thin films.
