Article, Early Access, 2024

An RC snubber design method to achieve optimized switching noise-loss trade-off of cascode GaN HEMTs

IET POWER ELECTRONICS, ISSN 1755-4535, 10.1049/pel2.12741

Contributors

Xue, Peng 0000-0002-4683-0101 (Corresponding author) [1] Hoene, Eckart [2] Davari, Pooya 0000-0002-3273-3271 [1]

Affiliations

  1. [1] Aalborg Univ, Energy Dept, DK-9220 Aalborg, Denmark
    2. [NORA names: AAU Aalborg University; University; Denmark; Europe, EU; Nordic; OECD];
  2. [2] Fraunhofer Inst Reliabil & Microintegrat IZM, Berlin, Germany
    3. [NORA names: Germany; Europe, EU; OECD]

Abstract

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Keywords

electromagnetic interference, power semiconductor devices, semiconductor device reliability, wide band gap semiconductors

Data Provider: Clarivate

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